2SK3711

60V N -ch MOSFET 2SK3711 December 2005 ■Features Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed ■Applications Electric power steering High current switching ■Equivalent circuit D (2) ■Package—TO3P G (1) S (3) Absolute maximum ratings Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 (Ta=25°C) Rating Unit 60 V ±20 V ±70A A ±140A A 130 (Tc=25°C) W 468 mJ Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to 150 °C *1 PW≤100μs, duty cycle≤1% *2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1 . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-002EA-051124 60V N -ch MOSFET 2SK3711 December 2005 Electrical characteristics Characteristic Drain to Source breakdown Voltage Symbol Test Conditions V(BR)DSS ID=100μA,VGS=0V MIN 60 Gate to Source Leakage Current IGSS VGS=±15V Drain to Source Leakage Current IDSS VDS=60V, VGS=0V Gate Threshold Voltage VTH VDS=10V, ID=1mA 2.0 Forward Transconductance Re(Yfs) VDS=10V, ID=35A 30 Static Drain to Source On-Resistance RDS(ON) ID=35A, VGS=10V Input Capacitance Ciss VDS=10V Output Capacitance Reverse Transfer Capacitance Coss VGS=0V Crss f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf ID=35A, VDD≈20V RL=0.57Ω, VG...