N-Channel MOSFET
60V N -ch MOSFET
2SK3711
December 2005
■Features
• Low on-resistance • Built-in gate protection diode • Avalanche ener...
Description
60V N -ch MOSFET
2SK3711
December 2005
■Features
Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed
■Applications
Electric power steering High current switching
■Equivalent circuit
D (2)
■Package—TO3P
G (1)
S (3)
Absolute maximum ratings
Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current
Pulsed Drain Current Maximum Power Dissipation
Single Pulse Avalanche Energy
Symbol VDSS VGSS
ID ID (pulse) *1
PD
EAS *2
(Ta=25°C)
Rating
Unit
60
V
±20
V
±70A
A
±140A
A
130 (Tc=25°C)
W
468
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μs, duty cycle≤1% *2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.jp/en/
1/9
T02-002EA-051124
60V N -ch MOSFET
2SK3711
December 2005
Electrical characteristics
Characteristic
Drain to Source breakdown Voltage
Symbol
Test Conditions
V(BR)DSS ID=100μA,VGS=0V
MIN 60
Gate to Source Leakage Current
IGSS VGS=±15V
Drain to Source Leakage Current
IDSS VDS=60V, VGS=0V
Gate Threshold Voltage
VTH VDS=10V, ID=1mA
2.0
Forward Transconductance
Re(Yfs) VDS=10V, ID=35A
30
Static Drain to Source On-Resistance RDS(ON) ID=35A, VGS=10V
Input Capacitance
Ciss
VDS=10V
Output Capacitance Reverse Transfer Capacitance
Coss VGS=0V
Crss
f=1MHz
Turn-On Delay Time Rise Time
Turn-Off Delay Time Fall Time
td(on) tr
td(off) tf
ID=35A, VDD≈20V RL=0.57Ω, VG...
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