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2SK3717 Dataheets PDF



Part Number 2SK3717
Manufacturers NEC
Logo NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet 2SK3717 Datasheet2SK3717 Datasheet (PDF)

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3717 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 4.0 ±0.2 2.0 ±0.2 FEATURES • Compact package • High forward transfer admittance 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S 1 2 3 0.50 TYP. 1.0 TYP. 0.45 TYP. 0.42 TYP. 0.6 TYP. ORDERING INFORMATION PART NUMBER 2SK3717 P.

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DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3717 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 4.0 ±0.2 2.0 ±0.2 FEATURES • Compact package • High forward transfer admittance 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S 1 2 3 0.50 TYP. 1.0 TYP. 0.45 TYP. 0.42 TYP. 0.6 TYP. ORDERING INFORMATION PART NUMBER 2SK3717 PACKAGE SC-72 (SST) 1.27 TYP. 1.27 TYP. 1.35 TYP. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C 1: Source 2: Gate 3: Drain 1 2 3 Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16785EJ1V0DS00 (1st edition) Date Published July 2003 NS CP(K) Printed in Japan 12.5 MIN. 3.0 ±0.2 2003 2SK3717 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS www.DataSheet4U.com Zero Gate Voltage Drain Cut-off Current Gate Cut-off Voltage Forward Transfer Admittance SYMBOL IDSS VGS(off) | yfs1 | | yfs2 | Input Capacitance Noise Voltage Ciss NV TEST CONDITIONS VDS = 5.0 V, VGS = 0 V VDS = 5.0 V, ID = 1.0 µA VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz Refer to NOISE VOLTAGE TEST CIRCUIT 150 600 MIN. 150 TYP. 250 −0.4 440 1400 3.9 1.3 3.0 MAX. 430 −1.0 UNIT µA V µS µS pF µV IDSS CLASSIFICATION MARKING IDSS (µA) F 150 to 240 H 210 to 350 J 320 to 430 NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1.0 kΩ JIS A NV (r.m.s) C = 10 pF 2 Data Sheet D16785EJ1V0DS 2SK3717 TYPICAL CHARACTERISTICS (TA = 25°C) www.DataSheet4U.com DRAIN FACTOR OF POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 dT - Derating Factor - % ID - Drain Current - µA 800 VGS = 0.2 V 600 0.1 V 400 0V 200 −0.1 V −0.3 V −0.2 V 0 0 2 4 6 8 10 TA - Ambient Temperature - °C VDS - Drain to Source Voltage - V GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 1600 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 5.0 V 1400 IGS - Gate to Source Current - µA 40 30 ID - Drain Current - µA 20 10 -0.6 −0.8 − 0.6 −0.4 −0.2 0 −10 −20 −30 −40 0.2 0.4 0.6 0.8 1200 1000 800 600 400 200 0 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 VGS - Gate to Source Voltage - V VGS - Gate to Source Voltage - V INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 FORWARD TRANSFER ADMITTANCE AND GATE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT 10 | yfs | - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V VGS = 0 V f = 1.0 MHz VDS = 5.0 V Ciss - Input Capacitance - pF | yfs | 1 VGS(off) 1 1 10 100 0.1 100 1000 VDS - Drain to Source Voltage - V IDSS - Zero Gate Voltage Drain Current - µA Data Sheet D16785EJ1V0DS 3 2SK3717 www.DataSheet4U.com • The information in this document is current as of July, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits.


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