2SK3736

www.DataSheet4U.com 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 250 ±10 6 24 6 30 150 –55 to +150 Unit V V A A A W °C °C Rev.2.00 Jul 27, 2006 page 1 of 6 2SK3736 Electrical Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 250 ±10 — — 0.5 — — 5.5 — — — — — — — — — — — — Typ — — — — — 0.55 0.57 9.2 450 100 60 17 0.8 9.5 14 48 88 25 0.94 125 Max — — ±10 5 1.5 0.7 0.8 — — — — — — — — — — — 1.45 — Unit V V µA µA V Ω Ω S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 4 V Note3 ID = 3 A, VGS = 2.5V Note3 ID = 3 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 200 V, VGS = 4 V, ID = 6 A VGS = 4 V, ID= 3 A, RL = 10 Ω, Rg = 10 Ω Item Drain to sou...