2SK3745LS

Ordering number : EN8635 2SK3745LS www.DataSheet4U.com 2SK3745LS Features N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID* IDP PD Tch Tstg EAS IAV Tc=25°C Conditions Ratings 1500 ±20 2 4 2.0 35 150 --55 to +150 42 2 Unit V V A A W W °C °C mJ A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings min 1500 100 ±10 2.5 0.7 1.4 10 13 3.5 typ max Unit V µA µA V S Ω Marking : K3745 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of relia...