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2SK3746 Dataheets PDF



Part Number 2SK3746
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK3746 Datasheet2SK3746 Datasheet (PDF)

Ordering number : ENN8283 2SK3746 www.DataSheet4U.com 2SK3746 Features • • • N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature S.

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Ordering number : ENN8283 2SK3746 www.DataSheet4U.com 2SK3746 Features • • • N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 1500 ±20 2 4 2.5 110 150 --55 to +150 42 2 Unit V V A A W W °C °C mJ A *1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings min 1500 100 ±10 2.5 0.7 1.4 10 13 3.5 typ max Unit V µA µA V S Ω Marking : K3746 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005QB MS IM TB-00001345 No.8283-1/4 2SK3746 Continued from preceding page. Parameter Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings min typ 380 70 40 12 37 152 59 37.5 2.7 20 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V www.DataSheet4U.com Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7503-004 15.6 14.0 2.6 3.5 4.8 3.2 2.0 1.6 2.0 20.0 1.3 15.0 20.0 1.2 1.0 0.6 1 2 3 0.6 1.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 5.45 5.45 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤0.5% ID=1A RL=200Ω VDD=200V Avalanche Resistance Test Circuit ≥50Ω RG L D VOUT 2SK3746 10V 0V 50Ω VDD G 2SK3746 P.G RGS=50Ω S No.8283-2/4 2SK3746 Tc=25°C pulse 3.5 www.DataSheet4U.com 4.0 ID -- VDS 8V 3.0 ID -- VGS VDS=20V pulse 2.5 Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 3.0 2.5 10V 2.0 6V 2.0 1.5 1.0 0.5 25°C 75°C 1.5 1.0 5V VGS=4V 0.5 0 0 5 10 15 20 25 30 35 40 45 50 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 30 IT09031 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT09032 RDS(on) -- Tc ID=1A ID=1A VGS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 18 20 25 20 20 15 Tc=75°C 25°C --25°C 15 10 10 5 5 0 0 2 4 6 8 10 12 14 16 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT09033 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Case Temperature, Tc -- °C IT09034 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=20V 3 2 25 1.0 7 5 3 2 °C 5°C --2 = °C Tc 75 Source Current, IS -- A 0.1 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 0.4 Tc= 7 5°C 25°C --25°C 0.6 0.8 1.0 1.2 IT09036 Drain Current, ID -- A 5 3 IT09035 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=200V VGS=10V td(off) 3 2 1000 7 5 3 2 100 7 5 3 Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF 100 7 5 3 2 Ciss tf Co ss Crss tr td(on) 10 0.1 2 3 5 7 1.0 2 3 2 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A IT09037 Drain-to-Source Voltage, VDS -- V IT09038 No.8283-3/4 2SK3746 10 VGS -- Qg Gate-to-Source Voltag.


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