Document
Ordering number : ENN8283
2SK3746
www.DataSheet4U.com
2SK3746
Features
• • •
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 1500 ±20 2 4 2.5 110 150 --55 to +150 42 2 Unit V V A A W W °C °C mJ A
*1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings min 1500 100 ±10 2.5 0.7 1.4 10 13 3.5 typ max Unit V
µA µA
V S Ω
Marking : K3746
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005QB MS IM TB-00001345 No.8283-1/4
2SK3746
Continued from preceding page.
Parameter Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings min typ 380 70 40 12 37 152 59 37.5 2.7 20 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
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Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7503-004
15.6 14.0
2.6 3.5
4.8 3.2 2.0
1.6 2.0
20.0
1.3
15.0
20.0
1.2
1.0
0.6
1
2 3
0.6
1.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB
5.45
5.45
Switching Time Test Circuit
VIN 10V 0V VIN PW=10µs D.C.≤0.5% ID=1A RL=200Ω VDD=200V
Avalanche Resistance Test Circuit
≥50Ω RG
L
D
VOUT
2SK3746 10V 0V 50Ω VDD
G
2SK3746 P.G RGS=50Ω
S
No.8283-2/4
2SK3746
Tc=25°C pulse 3.5 www.DataSheet4U.com
4.0
ID -- VDS
8V
3.0
ID -- VGS
VDS=20V pulse
2.5
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
3.0 2.5
10V
2.0
6V
2.0 1.5 1.0 0.5
25°C 75°C
1.5
1.0
5V VGS=4V
0.5
0 0 5 10 15 20 25 30 35 40 45 50
0 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
30
IT09031 30
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT09032
RDS(on) -- Tc
ID=1A
ID=1A VGS=10V
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
25
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
18 20
25
20
20
15
Tc=75°C
25°C --25°C
15
10
10
5
5
0 0 2 4 6 8 10 12 14 16
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
5
yfs -- ID
IT09033 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Case Temperature, Tc -- °C
IT09034
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
VDS=20V
3 2
25
1.0 7 5 3 2
°C
5°C --2 = °C Tc 75
Source Current, IS -- A
0.1
3
5
7
0.1
2
3
5
7
1.0
2
3
0.01 0.2
0.4
Tc= 7
5°C 25°C --25°C
0.6 0.8
1.0
1.2 IT09036
Drain Current, ID -- A
5 3
IT09035 5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=200V VGS=10V
td(off)
3 2 1000 7 5 3 2 100 7 5 3
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
100 7 5 3 2
Ciss
tf
Co
ss
Crss
tr
td(on)
10 0.1 2 3 5 7 1.0 2 3
2 10 0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID -- A
IT09037
Drain-to-Source Voltage, VDS -- V
IT09038
No.8283-3/4
2SK3746
10
VGS -- Qg
Gate-to-Source Voltag.