2SK3749

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an PACKAGE DRAWING (Unit: mm) 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.2 1 3 0.9 ± 0.1 Because of its high input impedance, there’s no need to consider drive current ORDERING INFORMATION PART NUMBER PACKAGE SC-70 (SSP) 2SK3749 Marking: G27 1 : Source 2 : Gate 3 : Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note EQUIVALENT CIRCUIT 50 ±7.0 ±100 ±200 150 150 −55 to +150 V V mA mA mW °C °C Gate Protection Diode Gate Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty Cycle ≤ 50% 0 to 0.1 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Ele...