2SK3773-01MR

2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET www.DataSheet4U.com Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg VISO Ratings 300 300 32 ±128 ±30 32 597.4 9.5 20 5 95 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=13A,L=6.13mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature kV/µs VDS< =300V and Avalanche current. kV/µs Note *4 See to the ‘Avalanche Energy’ graph Tc=25°C W Note *3:Repetitive rating:Pulse width limited by Ta=25°C maximum channel temperature. °C See to the ‘Transient Thermal impedance’ °C graph. kVrms t=60sec. f=60Hz < -ID, -di/dt = 50A/µs,VCC= < BVDSS,Tch= <150°C Not...