2SK3777-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
www.DataSheet4U.com
Super F...
2SK3777-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
www.DataSheet4U.com
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching
regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 300 300 53 ±212 ±30 53 1013.9 41 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=22A,L=3.03mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph < < Note *4:IF< = -ID, -di/dt=50A/µs,VCC= BVDSS,Tch= 150°C
kV/µs VDS= < 300V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C
Electrical characteristics (Tc =25°C unless oth...