2SK3788-01

2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET www.DataSheet4U.com Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 150 150 92 ±368 ±30 92 1205.7 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=37A,L=1.29mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph < < -ID, -di/dt=50A/µs,VCC Note *4:IF= = BVDSS,Tch< = 150°C kV/µs VDS= < 150V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless o...