N-Channel Junction Silicon FET
Ordering number : EN8636
2SK3796
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
2SK3796
Applicatins
•
N-Chann...
Description
Ordering number : EN8636
2SK3796
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
2SK3796
Applicatins
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.
Features
Small IGSS. Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=-10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA Ratings min --30 --1.0 --0.18 --0.95 --2.2 typ max Unit V nA V
Marking : K
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, t...
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