Document
DATA SHEET
www.DataSheet4U.com
UFF80-005~UFF80-06
8A ULTRA FAST RECOVERY RECTIFIER
1 0 . 2 7 9 . 7 2 3 . 4 M A X 4 . 8 A X . 1 A X
0 9 . 6
0 3 . 6
M 3 M
FEATURES
z ULTRA FAST RECOVERY TIME z LOW FORWARD VOLTAGE z LOW THERMAL RESISTANCE z HIGH CURRENT CAPABILITY z HIGH VOLTAGE z GLASS PASSIVATED CHIP JUNCTION
0 0 5 5 . . 5 1 1
4
2 2 1 . 5 2 M A X 0 . 9 M A X 1 2
. 9 . 5
X A M 1 . 4
5 . 2 0
0 8 . 3 1
0 0 . 3 1
. 8 M A X
MECHANICAL DATA
z CASE:TRANSFER MOLDED z TERMINAL:MIL-STD-202F METHOD 2026 1 2 z POLARITY︰AS MARKED z EPOXY:UL94V-0 FLAME RETARDANT MOLDING CASE:ITO-220AC COMPOUND z MOUNTING POSITION:ANY DIMENSIONS IN MILLIMETERS z WEIGHT:1.81 GRAMS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
4 . 9 5
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. UFF80 PARAMETER SYMBOL -005 MAXIMUM RECURRENT PEAK REVERSE VOLTAGE VRRM 50 MAXIMUM RMS VOLTAGE VRMS 35 MAXIMUM DC BLOCKING VOLTAGE VDC 50 MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT IO (SEE FIG.1) PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF IFSM SINE-WAVE SUPERIMPOSED ON RATED LOAD TYPICAL THERMAL RESISTANCE (NOTE 2) RθJC STORAGE TEMPERATURE RANGE TSTG OPERATING TEMPERATURE RANGE TJ ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED) UFF80 PARAMETER SYMBOL -005 MAXIMUM FORWARD VOLTAGE AT 8.0A VF 25℃ MAXIMUM DC REVERSE CURRENT IR 100℃ TYPICAL JUNCTION CAPACITANCE (NOTE 1) MAXIMUM REVERSE RECOVERY TIME(NOTE 3) NOTE: CJ TRR 35
UFF80 -01 100 70 100
UFF80 -02 200 140 200
UFF80 -03 300 210 300 8.0 125
UFF80 -04 400 280 400
UFF80 -05 500 350 500
UFF80 UNITS -06 600 V 420 V 600 V A A ℃/W ℃ ℃
3.5 -55 TO + 150 -55 TO + 150
UFF80 -01 0.95
UFF80 -02
UFF80 UFF80 -03 -04 1.30 10 100 50
UFF80 UFF80 UNITS -05 -06 1.50 V µA 60 pF nS
85
1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0F 4.0 VOLTS 2. THERMAL RESISTANCE JUNCTION TO CASE PER LEG MOUNTED ON HEATSINK 3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A
STAD-NOV.02.2005
PAGE.1
DATA SHEET
www.DataSheet4U.com
AVERAGE FORWARD RECTIFIED CURRENT (A)
UFF80-005~UFF80-06
JUNCTION CAPACITANACE
12 10 8 6 4 2 0 0
HEATSINK, CASE TEMPERATURE,T C
1000 100 10 100 1 10 0.1 10 0.01 11 0.1 0.1 1 0.1
1000 100
FREE AIR,AMBIENT, TEMPERATURE T A
RESISTIVE OR INDUCTIVE LOAD
UFF80-005~04 8.3ms SINGLE HALF SINE-WAVE +150 (JEDEC METHOD) +25℃ TJ=25°C TJ=25°C
UFF80-05~06
10
f=1MHz Vsig=50mVp-p
1 0.3 10.5 1 0.7 10 0.9 10 10 1.1 1.3100
25
50
75
100 125 150 175
AMBIENT TEMPERATURE(°C)
REVERSE VOLTAGE(V)
Fig.1-MAXIMUM FORWARD CURRENT DERATING CURVE
Fig.2-TYPICAL JUNCTION CAPACITANCE
100 1000 100 10 10 1 TJ=25°C 0.1 1 TJ=25°C f=1MHz Vsig=50mVp p
INSTANTANEOUS FORWARD CURRENT(A)
INSTANTANEOUS REVERSE CURRENT(uA)
100
UFF80-005~015
TJ=125° TJ=80°C
10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
UFF80-05~06 UFF80-02~04
10
20
40
60 10 80
100 120 140 100
PERCENT OF RATED REVERSE VOLTAGE(%)
INSTANTANEOUS FORWARD VOLTAGE(V)
Fig.3-TYPICAL REVERSE CHARACTERISTICS
Fig.4-TYPICAL INSTANTANEOUS FO.