D13007F

www.DataSheet4U.com Semiconductor STD13007F NPN Silicon Power Transistor Features High speed switching High Collector Voltage : VCBO = 700V Suitable for Switching Regulator and Motor Control Ordering Information Type NO. STD13007F Marking STD13007 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-H035-000 1 STD13007F Absolute maximum ratings www.DataSheet4U.com Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector Power dissipation (Tc=25℃) Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC ICM IB PC Tj Tstg Rating 700 400 9 8 16 4 40 150 -55~150 Unit V V V A A A W °C °C Electrical Characteristics Characteristic Collector-Emitter sustaining voltage Emitter cut-off current DC Current gain (Ta=25°C) Symbol BVCEO(sus) IEBO hFE* Test Condition IC=10mA, IB=0 VEB=9V, IC=0 IC=2A, VCE=5V IC=5A, VCE=5V IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A Min. Typ. Max. 400 8 5 14 80 1 60 30 1 2 3 1.2 1.6 1.6 3 0.7 Unit V mA Collector-Emitter saturation voltage VCE(sat)* V Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time * Pulse test: PW≤300 ㎲, Duty cycle≤2%. VBE(sat)* fT Cob ton tstg tf IC=2A, IB=0.4A IC=5A, IB=1A VCE=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V, IC=5A IB1=-IB2=1A V MHz ㎊ - ㎲ KST-H035-000 2 STD...