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SKIIP83AC12 Dataheets PDF



Part Number SKIIP83AC12
Manufacturers Semikron
Logo Semikron
Description Miniskiip 8 Semikron Integrated Intelligent Power
Datasheet SKIIP83AC12 DatasheetSKIIP83AC12 Datasheet (PDF)

SKiiP 83 AC 12 - SKiiP 83 AC 12 I www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 80 / 53 160 / 106 720 2600 Units V V A A °C °C V A A A A2 s Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AC 12 SKiiP 83 AC 12 I 3) SKiiP 83 AC 12 IS 4) IGBT 3-phase bridge inverter Case M8 Inverse Diode IF = .

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SKiiP 83 AC 12 - SKiiP 83 AC 12 I www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 80 / 53 160 / 106 720 2600 Units V V A A °C °C V A A A A2 s Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AC 12 SKiiP 83 AC 12 I 3) SKiiP 83 AC 12 IS 4) IGBT 3-phase bridge inverter Case M8 Inverse Diode IF = –IC Theatsink = 25 / 80 °C IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C tp = 10 ms; sin., Tj = 25 °C IFSM tp = 10 ms; sin., Tj = 25 °C I2t Characteristics Symbol Conditions 1) IGBT - Inverter IC = 100 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 100 A; Tj = 125 °C tr Rgon = Rgoff = 11 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter VF = VEC IF = 75 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C rT IF = 75 A, VR = – 600 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ ~ UL recognized file no. E63532 • • more detailed characteristics of current sensors and temperature sensor please refer to part A common characteristics see page B 16 – 4 Current sensor for three phase output ac current (SKiiP 83 AC 12 I) Ip RMS Continuous current, – 50 – T = 100 °C, Vsuppl = ± 15 V 80 – – t≤ 2s Ipmax RMS – 1000 – t ≤ 10 µs Ip peak – 50 – terminating resistance Rout rated sensor current Is RMS 25 at Ip = 50 ARMS 1 : 2000 Ip : Is transfer ratio – ± 0,2 – Offset error IP = 0 A, T = – 40 ... 100 °C – 0,1 – Linearity – <1 – delay time IP = 10 % – 80 % – <1 – 90 % – 20 % 0 – 100 (– 3dB) Bandwidth Temperature Sensor RTS T = 25 / 100 °C Mechanical Data case to heatsink, SI Units M1 Case mechanical outline see pages B 16 – 11 and B 16 – 12 2,5 1000 / 1670 – M8 3,5 A A A Ω mA mA % µs µs kHz Ω Nm Options • also available with powerful freewheeling diodes. Data sheet on request 1) 2) 3) 4) Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated closed loop current sensors Extended current range, data sheet on request © by SEMIKRON 0698 B 16 – 67 IC [A] 200 www.DataSheet4U.com 17V 160 0 15V 13V 120 11V 9V 80 7V 83AC1201 IC [A] 200 83AC1202 17V 160 15V 13V 120 11V 9V 80 7V 40 40 0 0 1 2 3 4 5 VCE [V] 0 0 1 2 3 4 5 VCE [V] Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 11 Ω Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 100 A Fig. 3 Turn-on /-off energy = f (IC) VGE [V] 20 18 600V 16 14 12 10 8 6 4 2 0 0 200 400 600 800 QG [nC] 800V 83AC1205 Fig. 4 Turn-on /-off energy = f (RG) ICpuls = 100 A VGE = 0 V f = 1 MHz Fig. 5 Typ. gate charge characteristic B 16 – 68 Fig. 6 Typ. capacitances vs. V CE 0698 © by SEMIKRON MiniSKiiP 1200 V www.DataSheet4U.com ICop / IC 1.2 Mini1207 Tj = 150 °C VGE = ≥ 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [°C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) ICpuls/IC 2,5 Mini1209 Tj = ≤ 150 °C VGE = ± 15 V ICsc/ICN 12 Mini1210 2 10 Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH 8 1,5 6 1 4 Note: *Allowed numbers of short ci rcuit:<1000 *Time between short circuit:>1s 0,5 2 0 0 500 1000 1500 VCE [V] 0 0 500 1000 1500 VCE [V] Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic B 16 – 4 Fig. 12 Forward characteristic of the input bridge diode 0698 © by SEMIKRON www.DataSheet4U.com MiniSKiiP 8 Inverter part SKiiP 82 AC 06 ... SKiiP 83 AC 06 ... SKiiP 81 AC 12 ... SKiiP 82 AC 12 ... SKiiP 83 AC 12 ... Circuit Case M8 Note: The current sensors are available only by option I www.DataSheet4U.com MiniSKiiP 8 Inverter part SKiiP 82 AC 06 ... SKiiP 83 AC 06 ... SKiiP 81 AC 12 ... SKiiP 82 AC 12 ... SKiiP 83 AC 12 ... Case M8 Layout and connections for the customer’s printed circuit board pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 ~1 – + ~2 + – ~3 connection T+ TET1 CB1 GB1 GT1 EB1 EB2 CT1 CT2 GB2 GT2 ET2 CB2 CT1 CT2 EB1 EB2 GT3 ET3 CB3 GB3 K1 for ~1 K2 for ~1 S1 for ~1 S2 for ~1 K1 for ~2 K2 for ~2 S1 for ~2 S2 for ~2 K1 for ~3 K2 for ~3 S1 for ~3 S2 for ~3 optional EB3 CT3 CT3 EB3 X X X X X X X X X X X X .


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