MultiChip Module. AT68166G Datasheet

AT68166G Datasheet PDF, Equivalent


Part Number

AT68166G

Description

Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module

Manufacture

ATMEL Corporation

Total Page 17 Pages
PDF Download
Download AT68166G Datasheet PDF


AT68166G Datasheet
Features
16 wMwbwit.DSaRtaASMheMet4uUlt.icComhip Module
Allows 32-, 16- or 8-bit access configuration
Operating Voltage: 3.3V + 0.3V
Access Time
– 20 ns, 18 ns for AT68166F
– <18 ns for AT68166G (in development prototypes in Q4 2007)
Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns (1)
– Standby: 13 mW (Typ)
Military Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Die manufactured on Atmel 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
ESD Better than 4000V
Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
950 Mils Wide MQFP 68 Package
Mass : 8.5 grams
Note: 1. Only for AT68166F-18. 450mW for AT68166F-20.
Description
The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module
(MCM) for space applications.
The AT68166F/G MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be
organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of
512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a
Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access
time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166F/G memory.
The AT68166F/G is powered at 3.3V.
The AT68166F/G is processed according to the test methods of the latest revision of
the MIL-PRF-38535 or the ESCC 9000.
Rad Hard
16 MegaBit
3.3V
SRAM Multi-
Chip Module
AT68166F
AT68166G
7747A–AERO–07/07

AT68166G Datasheet
Block Diagram Figure 1. AT68166F/G Block Diagram
www.DataSheet4U.com
A[18:0]
OE
CS3
WE3
CS2
WE2
CS1
WE1
BANK3
512k x 8
BANK2
512k x 8
BANK1
512k x 8
I/O[31:24]
or
I/O2[31:16]
or
I/O3[7:0]
I/O[23:16]
or
I/O2[15:0]
or
I/O2[7:0]
I/O[15:8]
or
I/O1[31:16]
or
I/O1[7:0]
Figure 2. 512K x 8 Banks Block Diagram (AT60142F/G)
A0
-
-
-
A10
I/Ox0
I/Ox7
CS0
WE0
BANK0
512k x 8
I/O[7:0]
or
I/O1[15:0]
or
I/O[7:0]
Packages
CSx
WEx
OE
AT68166F and AT68166G are packed in MQFP68.
AT68166F
AT68166G
20 ns
YM
Access Time
18 ns
YS
<18 ns
YS
The pin assignment depends on the access time. There are 2 versions:
– YM package where 3 pins are not connected.
– YS package where the 3 above pins are connected to GND or VCC.
2 AT68166F/G
7747A–AERO–07/07


Features Datasheet pdf Features • • • • • • • • • • • • • • • 16 www.Dat aSheet4U.com Mbit SRAM Multi Chip Modul e Allows 32-, 16- or 8-bit access confi guration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT681 66F – <18 ns for AT68166G (in develop ment prototypes in Q4 2007) Power Consu mption – Active: 620 mW per byte (Max ) @ 18ns - 415 mW per byte (Max) @ 50ns (1) – Standby: 13 mW (Typ) Military Temperature Range: -55 to +125°C TTL-C ompatible Inputs and Outputs Asynchrono us Die manufactured on Atmel 0.25 µm R adiation Hardened Process No Single Eve nt Latch Up below LET Threshold of 80 M eV/mg/cm2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 ESD Better than 4000V Qual ity Grades: – QML-Q or V with SMD 596 2-06229 – ESCC 950 Mils Wide MQFP 68 Package Mass : 8.5 grams 1. Only for AT 68166F-18. 450mW for AT68166F-20. Rad Hard 16 MegaBit 3.3V SRAM MultiChip Mod ule AT68166F AT68166G Note: Description The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip.
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