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VDSM = 4200 V ITAVM = 470 A ITRMS = 740 A www.DataSheet4U.com ITSM = 6400 A VT0 = 1V rT = 1.5 mΩ
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Phase Control Thyristor
5STP 04D4200
Doc. No. 5SYA1025-04 Jan. 02
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C
5STP 04D4200 5STP 04D4000 5STP 04D3600 4200 V 4600 V 4000 V 4400 V 1000 V/µs min typ max 100 100 Unit mA mA 3600 V 4000 V
Characteristic values
Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C
Forwarde leakage current Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 8
typ 10
max 12 50 100
Unit kN m/s m/s Unit kg mm mm
2 2
Parameter Weight Surface creepage distance Air strike distance
Symbol Conditions m DS Da
min 25 14
typ 0.3
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 04D4200
On-state
Maximum rated values
1)
Parameter current
Symbol Conditions Half sine wave, Tc = 70°C
min
typ
max 470 740
Unit A A A kA2s A kA2s Unit V V mΩ mA mA mA mA
w w waverage . D a t a on-state S h e e t 4 U . cITAVM o m Max.
RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V min typ
6400 204 7000 203 max 1.78 1 1.5 75 60 500 200
Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current
Symbol Conditions VT VT0 rT IH IL IT = 500 A, Tj= 125°C IT = 300 A - 1000 A, Tj= 125°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Switching
Maximum rated values
1)
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current
Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125°C, ITRM = 1500 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
min
typ
max 100 1000
Unit A/µs A/µs µs
Circuit-commutated turn-off tq time
Characteristic values
600
Parameter Recovery charge Delay time
Symbol Conditions Qrr td Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -5 A/µs VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
min 800
typ
max 2000 3
Unit µAs µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1025-04 Jan. 02 page 2 of 6
5STP 04D4200
Triggering
Maximum rated values
1)
Parameter .