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5STP04D3600 Dataheets PDF



Part Number 5STP04D3600
Manufacturers ABB
Logo ABB
Description Phase Control Thyristor
Datasheet 5STP04D3600 Datasheet5STP04D3600 Datasheet (PDF)

VDSM = 4200 V ITAVM = 470 A ITRMS = 740 A www.DataSheet4U.com ITSM = 6400 A VT0 = 1V rT = 1.5 mΩ • • • • • Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-04 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, si.

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VDSM = 4200 V ITAVM = 470 A ITRMS = 740 A www.DataSheet4U.com ITSM = 6400 A VT0 = 1V rT = 1.5 mΩ • • • • • Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-04 Jan. 02 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C 5STP 04D4200 5STP 04D4000 5STP 04D3600 4200 V 4600 V 4000 V 4400 V 1000 V/µs min typ max 100 100 Unit mA mA 3600 V 4000 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tj = 125°C VRRM, Tj = 125°C Forwarde leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 8 typ 10 max 12 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 25 14 typ 0.3 max 1) Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 04D4200 On-state Maximum rated values 1) Parameter current Symbol Conditions Half sine wave, Tc = 70°C min typ max 470 740 Unit A A A kA2s A kA2s Unit V V mΩ mA mA mA mA w w waverage . D a t a on-state S h e e t 4 U . cITAVM o m Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V min typ 6400 204 7000 203 max 1.78 1 1.5 75 60 500 200 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL IT = 500 A, Tj= 125°C IT = 300 A - 1000 A, Tj= 125°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125°C, ITRM = 1500 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, min typ max 100 1000 Unit A/µs A/µs µs Circuit-commutated turn-off tq time Characteristic values 600 Parameter Recovery charge Delay time Symbol Conditions Qrr td Tj = 125°C, ITRM = 1500 A, VR = 200 V, diT/dt = -5 A/µs VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs min 800 typ max 2000 3 Unit µAs µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1025-04 Jan. 02 page 2 of 6 5STP 04D4200 Triggering Maximum rated values 1) Parameter .


5STP04D4000 5STP04D3600 2SC2773


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