IXFN102N30P

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 102 A 33 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-264(SP) (IXFK) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 SOT-227B 300 1.13/10 Nm/lb.in. 10 30 g g Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages...