Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N5157
DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 700 500 7 3.5 100 165 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2N5157
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT
Collector-emitter sustaining voltage
IC=0.1A ; IB=0 IC=3A; IB=0.5A IC=3A; IB=0.5A VCB=700V; IE=0 TC=125 VCE=500V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V;f=5.0MHz
500
V
Collector-emitter saturation voltage
1.2
V
Base-emitter saturation voltage
1.5 0.2 2.0 5.0
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
1.0
mA
DC current gain
30
90
Transition frequency
2.8
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5157
Fig.2 Outline dimensions
3
.