2SB709A

BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A FEATURES z z Pb Lead-free APPLICATIONS z For general amplification complementary to 2SD601A SOT-23 ORDERING INFORMATION Type No. 2SB709A Marking BQ1,BR1,BS1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -45 -45 -7 -200 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC015 Rev.A www.galaxycn.com 1 BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Test conditions IC=-10μA,IE=0 IC=-2mA,IB=0 B 2SB709A MIN -45 -45 -7 -0.1 -100 160 460 -0.5 60 V MHz TYP MAX UNIT V V V μA μA Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Transition frequency IE=-10μA,IC=0 VCB=-20V,IE=0 VEB=-10V,IC=0 VCE=-10V,IC=-2mA IC=-100mA, IB=-10m...