Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N5622 2N5624 2N5626 2N5628
DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5622 VCEO(SUS) Collector-emitter sustaining voltage 2N5624/5626 2N5628 VCEsat VBE ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2N5622/5626 hFE DC current gain 2N5624/5628 2N5622/5626 fT Transition frequency 2N5624/5628
2N5622 2N5624 2N5626 2N5628
SYMBOL
CONDITIONS
MIN 60
TYP.
MAX
UNIT
IC=50mA ;IB=0
80 100
V
IC=10A; IB=1A IC=5A ; VCE=5V VCB=Rated VCBO; IE=0 VEB=5V; IC=0 70 IC=5A ; VCE=5V 30 40 IC=1A ; VCE=12V 30
1.5 1.5 0.1 0.1 200 90
V V mA mA
MHz
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5622 2N5624 2N5626 2N5628
Fig.2 outline dimensions
3
.