E53NC50

www.DataSheet4U.com N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET TYPE STE53NC50 n n n n n STE53NC50 VDSS 500V RDS(on) < 0.08Ω ID 53 A TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER n ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 3.68 3 2500 – 65 to 150 150 (1) ISD≤ 53A, di/dt ≤100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns V °C °C 1/8 ()Pulse width limited by safe operating area STE53NC50 www.DataSheet4U.com THERMAL DATA Rthj-case Rthc-...