2N5840

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5838 VCBO Collector-base voltage 2N5839 2N5840 2N5838 VCEO Collector-emitter voltage 2N5839 2N5840 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 275 300 375 250 275 350 6 3 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5838 hFE DC current gain 2N5839/5840 fT Transition frequency IC=2A ; VCE=3V IC=2A; IB=0.4A IC=2A; IB=0.4A IC=0.1A ;IB=0 2N5838 2N5839 2N5840 SYMBOL CONDITIONS MIN 250 275 350 TYP. MAX UNIT V 0.8 1.5 ...