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37VF020

Silicon Storage Technology

SST37VF020

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 ...


Silicon Storage Technology

37VF020

File Download Download 37VF020 Datasheet


Description
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 www.DataSheet4U.com SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories Data Sheet FEATURES: Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 2.7-3.6V Read Operation Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 2 µA (typical) Fast Read Access Time: – 70 ns – 90 ns Latched Address and Data Fast Byte-Program Operation: – Byte-Program Time: 10 µs (typical) – Chip Program Time: 0.6 seconds (typical) for SST37VF512 1.2 seconds (typical) for SST37VF010 2.4 seconds (typical) for SST37VF020 4.8 seconds (typical) for SST37VF040 Electrical Erase Using Programmer – Does not require UV source – Chip-Erase Time: 100 ms (typical) CMOS I/O Compatibility JEDEC Standard Byte-wide Flash EEPROM Pinouts Packages Available – 32-pin PLCC – 32-pin TSOP (8mm x 14mm) – 32-pin PDIP PRODUCT DESCRIPTION The SST37VF512/010/020/040 devices are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable (MTP), low cost flash, manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST37VF512/010/020/040 can be electrically eras...




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