N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60H/J
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Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electron...
Description
AP02N60H/J
www.DataSheet4U.com
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G S D
BVDSS RDS(ON) ID
600V 8Ω 1.6A
Description
G D
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP02N60J) is available for low-profile applications.
G D S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 1.6 1 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
64 1.6 0.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units ℃/W ℃/W
200705051-1/4
Data & specifications subject to change without notice
AP02N60H/J
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 600 ...
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