N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N60I
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Repetitive Ava...
Description
www.DataSheet4U.com
AP02N60I
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement
G S D
BVDSS RDS(ON) ID
600V 8Ω 2A
Description
The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 600 ± 30 2 1.26 3.6 22 0.176
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
80 2 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.7 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200117032
AP02N60I www.DataSheet4U.com
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 600 2 -
Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14
Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA...
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