Document
AP02N60P
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Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G D S
BVDSS RDS(ON) ID TO-220
600V 8Ω 2A
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±20 2 1.26 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
130 2 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Units ℃/W ℃/W
200721052-1/4
Data & specifications subject to change without notice
AP02N60P
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 600 2 -
Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14
Max. Units 8 4 10 100 ±100 20 240 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=300V ID=2A RG=10Ω,VGS=10V RD=150Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.5V
1
Min. -
Typ. -
Max. Units 2 6 1.5 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=2A, VGS=0V
Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=50mH , RG=25Ω , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%.
o
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AP02N60P
0.9
1.5
T C =25 o C ID , Drain Current (A)
10V 6.0V 5.5V ID , Drain Current (A)
0.6
T C =150 C
o
10V 6.0V 5.5V
1
5.0V
0.5
5.0V V G = 4.5 V
0.3
V G = 4.5 V
0 0 5 10 15 20
0 0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
1.1
I D =1A V G =10V Normalized RDS(ON)
2
Normalized BVDSS (V)
1
1
0.9
0.8
0 -50 0 50 100 150 -50 0 50 100 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
4 10
T j = 150 o C
T j = 25 o C
VGS(th) (V)
1.2
IS (A)
3
1 2
0.1 0 0.2 0.4 0.6 0.8 1
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP02N60P
16
f=1.0MHz
1000
I D =2A VGS , Gate to Source Voltage (V)
12
8
C (pF)
V DS =320V V DS =400V V DS =480V
C iss
100
4
C oss C rss
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
1ms
1
10ms
0.2
0.1
ID (A)
100ms 1s DC T c =25 C Single Pulse
o
0.1
0.05
0.02
PDM
0.1
t
0.01
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01 1 10 100 1000 10000
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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