2N5873 Transistor Datasheet

2N5873 Datasheet, PDF, Equivalent


Part Number

2N5873

Description

(2N5873 / 2N5874) Silicon NPN Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N5873 Datasheet


2N5873
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N5873 2N5874
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5873
2N5874
Open emitter
VCEO
Collector-emitter voltage
2N5873
2N5874
Open base
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
60
80
60
80
5
7
115
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W

2N5873
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N5873 2N5874
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5873
2N5874
IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage
IC=5A;IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=ratedVCBO; IB=0
ICEO Collector cut-off current
2N5873 VCE=30V; IB=0
2N5874 VCE=40V; IB=0
IEBO Emitter cut-off current
hFE DC current gain
fT Trainsistion frequency
VEB=5V; IC=0
IC=2.5A ; VCE=4V
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
60
V
80
1.0 V
1.5 V
1.0 mA
2.0 mA
1.0 mA
20 100
4 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCR IPTION ·With TO-3 package ·Low collec tor saturation voltage APPLICATIONS ·F or medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Em itter Collector Fig.1 simplified outlin e (TO-3) and symbol DESCRIPTION Absolu te maximum ratings(Ta= ) SYMBOL PARAMET ER 2N5873 VCBO Collector-base voltage 2 N5874 2N5873 VCEO Collector-emitter vol tage 2N5874 VEBO IC PD Tj Tstg Emitter- base voltage Collector current Total Po wer Dissipation Junction temperature St orage temperature TC=25 Open collector Open base 80 5 7 115 150 -65~200 V A W Open emitter 80 60 V CONDITIONS VALUE 6 0 V UNIT THERMAL CHARACTERISTICS SYMBO L Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W Sa vantIC Semiconductor www.DataSheet4U.co m Product Specification Silicon NPN P ower Transistors 2N5873 2N5874 CHARAC TERISTICS Tj=25 unless otherwise specified PARAMETER 2N5873 IC=0.1.
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