2N5875

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5875 2N5876 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5875 Collector-base voltage 2N5876 2N5875 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5876 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -10 -20 -4 150 200 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N5875 2N5876 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 IC=-5A;IB=-0.5A IC=-10A;IB=-2.5A IC=-10A;IB=-2.5A IC=-4A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5875 ICEO Collector cut-off current 2N5876 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=-40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-4A ; VCE=-4V IC=...