2SC2782A

2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE www.DataSheet4U.com 2SC2782A Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) VHF BAND POWER AMPLIFIER APPLICATIONS z Output Power ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 36 16 4 20 220 175 −65~175 UNIT V V V A W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC — reliability significantly even if the operating conditions (i.e. operating EIAJ — temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 2−13C1A ratings. Weight: 5.5g Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). MARKING TOSHIBA JAPAN 2SC2782 Dot Lot No. 1 2007-11-01 2SC2782A ELECTRICAL CHARACTERISTICS (Tc = 25°C) www.DataSheet4U.com CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Output Power Power Gain Collector Efficiency Seri...