SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-12...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications
PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N6034 VCBO Collector-base voltage 2N6035 2N6036 2N6034 VCEO Collector-emitter voltage 2N6035 2N6036 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -4 -8 -0.1 40 150 -65~150 V A A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC curren...