2N6036 Transistor Datasheet

2N6036 Datasheet, PDF, Equivalent


Part Number

2N6036

Description

(2N6034 - 2N6036) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6036 Datasheet


2N6036
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2N6037/6038/6039
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Product Specification
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6034
VCBO
Collector-base voltage 2N6035
2N6036
2N6034
VCEO
Collector-emitter voltage 2N6035
2N6036
VEBO
IC
ICM
IB
PD
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-4
-8
-0.1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
3.12
UNIT
/W

2N6036
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6034 2N6035 2N6036
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6034
2N6035 IC=-0.1A ;IB=0
2N6036
-40
-60
-80
V
VCEsat-1 Collector-emitter saturation voltage IC=-2A; IB=-8mA
-2.0 V
VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-40mA
-3.0 V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-40mA
-4.0 V
VBE Base-emitter on voltage
IC=-2A ; VCE=-3V
-2.8 V
ICEO Collector cut-off current
ICEX Collector cut-off current
ICBO Collector cut-off current
VCE=Rated VCEO; IB=0
VCE=Rated VCEO; VBE(off)=1.5V
TC=125
VCB=Rated VCBO; IE=0
-0.1 mA
-0.1
-0.5
mA
-0.1 mA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-2.0 mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-3V
500
hFE-2
DC current gain
IC=-2A ; VCE=-3V
750 15000
hFE-3
DC current gain
IC=-4A ; VCE=-3V
100
COB Output capacitance
IE=0;VCB=-10V;f=0.1MHz
200 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -126 package ·Complement to type 2N603 7/6038/6039 ·DARLINGTON ·High DC curr ent gain APPLICATIONS ·Designed for ge neral-purpose amplifier and low-speed s witching applications PINNING(see Fig.2 ) PIN 1 2 3 DESCRIPTION Emitter Collect or Base 2N6034 2N6035 2N6036 Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6034 VCBO Collector-base voltage 2N6 035 2N6036 2N6034 VCEO Collector-emitte r voltage 2N6035 2N6036 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collect or current Collector current-peak Base current Total Power Dissipation Junctio n temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -8 0 -5 -4 -8 -0.1 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYM BOL Rth j-c PARAMETER Thermal resistanc e junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification S.
Keywords 2N6036, datasheet, pdf, SavantIC, 2N6034, -, 2N6036, Silicon, Power, Transistor, N6036, 6036, 036, 2N603, 2N60, 2N6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)