2N6053 Transistor Datasheet

2N6053 Datasheet, PDF, Equivalent


Part Number

2N6053

Description

(2N6053 / 2N6054) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6053 Datasheet


2N6053
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6053 2N6054
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2N6055;2N6056
APPLICATIONS
·General-purpose power amplifier and low
frequency swithing applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6053
2N6054
Open emitter
VCEO
2N6053
Collector-emitter voltage
2N6054
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-8
-16
-120
100
200
-65~200
UNIT
V
V
V
A
A
mA
W
VALUE
1.75
UNIT
/W

2N6053
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6053 2N6054
CHARACTERISTICS
Tm=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6053
2N6054
IC=-0.1 A ;IB=0
VCE(sat)-1 Collector-emitter saturation voltge
IC=-4A ;IB=-16mA
VCE(sat)-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA
VBE(sat) Base-emitter saturation voltage
IC=-8A ;IB=-80mA
VBE Base-emitter on voltage
IC=-4A ; VCE=-3V
2N6053 VCE=-30V; IB=0
ICEO Collector cut-off current
2N6054 VCE=-40V; IB=0
ICEX
Collector cut-off current
2N6053
VCE=-60V; VBE(off)=-1.5V
TC=150
2N6054
VCE=-80V; VBE(off)=-1.5V
TC=150
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-3V
hFE-2
DC current gain
IC=-8A ; VCE=-3V
COB Output capacitance
IE=0;VCB=-10V;f=0.1MHz
MIN TYP. MAX UNIT
-60
V
-80
-2.0 V
-3.0 V
-4.0 V
-2.8 V
-0.5 mA
-0.5
-5.0
mA
-0.5
-5.0
-2.0 mA
750 18000
100
350 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -3 package ·Low collector saturation v oltage ·DARLINGTON ·Complement to typ e 2N6055;2N6056 APPLICATIONS ·General- purpose power amplifier and low frequen cy swithing applications PINNING (See F ig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6053 2N6054 Fig.1 simpl ified outline (TO-3) and symbol ABSOLU TE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6053 2N6054 2N6053 2N6054 CONDITIONS Open e mitter VALUE -60 -80 -60 -80 -5 -8 -16 -120 TC=25 100 200 -65~200 UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Collector-e mitter voltage Emitter-base voltage Col lector current Collector current-peak B ase current Total Power Dissipation Jun ction temperature Storage temperature Open base Open collector V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W SavantIC Semiconductor www.DataSheet4U.c.
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