SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2N6098 2N6099 2N6100 2N6101
DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6098 2N6099
2N6098 2N6099 2N6100 2N6101
SYMBOL
CONDITIONS
MIN 70 70
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0 2N6100 2N6101 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ; VCE=4V 1.3 2N6100/6101 IC=5A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150 VEB=8V; IC=0 2N6098/6099 IC=4A ; VCE=4V 20 2N6100/6101 IC=5A ; VCE=4V IC=1A ; VCE=10V 0.8 80 0.5 2.0 1.0 1.3 3.5
V
VCEsat-1 VCEsat-2
Collector-emitter saturation voltage Collector-emitter saturation volt...