2N6110

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6106 VCBO Collector-base voltage 2N6108 2N6110 2N6106 VCEO Collector-emitter voltage 2N6108 2N6110 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -30 -50 -70 -5 -7 -10 -3 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6106 VCEO(SUS) Collector-emitter sustaining voltage 2N6108 2N6110 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2N6106 ICEO Collector cut-off current 2N6108 2N6110 2N6106 ICEX Collector cut-off current 2N6108 2N6110 IEBO Emitter cut-off current 2N6106 hFE-1 DC current gain 2N6108 2N6110 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=-7A;IB=-3A IC=-7A ; VCE=-4V VCE=-20V...