2N6049 Transistor Datasheet

2N6049 Datasheet, PDF, Equivalent


Part Number

2N6049

Description

Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6049 Datasheet


2N6049
SavantIC Semiconductor
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Product Specification
2N6049
DESCRIPTION
·With TO-66 package
·Complement to type 2N3054A
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PD Power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-90
-55
-7
-4
-10
-2
75
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
2.33
UNIT
/W

2N6049
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6049
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0
-55
V
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
-0.5 V
VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-0.8A
-2.0 V
VBE Base -emitter on voltage
ICEX Collector cut-off current
ICEO Collector cut-off current
IC=-0.5A ; VCE=-4V
VCE=-90V;VBE(off)=-1.5V
TC=150
VCE=-30V; IB=0
-1.0 V
-1.0
-6.0
mA
-0.5 mA
IEBO Emitter cut-off current
VEB=-7V; IC=0
-1.0 mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
25 100
hFE-2
DC current gain
IC=-3A ; VCE=-4V
6
COB Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
200 pF
fT Transition frequency
IC=-0.2A ; VCE=-10V;f=1MHz
3.0
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION ·With TO-66 package ·Complement to ty pe 2N3054A APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simpl ified outline (TO-66) and symbol DESCRI PTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage C ollector-emitter voltage Emitter-base v oltage Collector current Collector curr ent-peak Base current Power dissipation Junction temperature Storage temperatu re TC=25 CONDITIONS Open emitter Open b ase Open collector VALUE -90 -55 -7 -4 -10 -2 75 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j -C PARAMETER Thermal resistance junctio n to case MAX 2.33 UNIT /W SavantIC Se miconductor www.DataSheet4U.com Produc t Specification Silicon PNP Power Tran sistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER.
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