K15N120

SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3 VCE 1200V IC 15A Eoff 1.5mJ Tj 150°C Marking K15N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 30 15 Unit V A ICpuls IF 52 52 32 15 IFpuls VGE tSC Ptot 50 ±20 10 198 V µs W VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_2 Sep 08 Power Semiconductors SKW15N120 www.DataSheet4...