2N6231 Transistor Datasheet

2N6231 Datasheet, PDF, Equivalent


Part Number

2N6231

Description

(2N6229 - 2N6231) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6231 Datasheet


2N6231
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6229 2N6230 2N6231
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For high power audio; disk head
positioners and other linear applications.
PINNING
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6229
VCBO
Collector-base voltage
2N6230
2N6231
2N6229
VCEO
Collector-emitter voltage 2N6230
2N6231
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-100
-120
-140
-100
-120
-140
-7
-10
150
150
-65~200
UNIT
V
V
V
A
W
VALUE
0.875
UNIT
/W

2N6231
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6229 2N6230 2N6231
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6229
2N6230 IC=-0.2A ;IB=0
2N6231
-100
-120
-140
V
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
-1.0 V
VBE Base-emitter on voltage
IC=-5A ; VCE=-2V
-2.0 V
ICEO Collector cut-off current
VCE=Rated VCEO; IB=0
-5.0 mA
ICBO Collector cut-off current
VCB=Rated VCBO; IE=0
-1.0 mA
IEBO Emitter cut-off current
VEB=-7V; IC=0
-0.1 mA
2N6229
25 100
hFE DC current gain
2N6230 IC=-5A ; VCE=-2V
20 80
2N6231
15 60
fT Transition frequency
IC=-0.5A ; VCE=-4V
1
MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2N6229 2N6230 2N6231 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excelle nt safe operating area APPLICATIONS ·F or high power audio; disk head position ers and other linear applications. PINN ING PIN 1 2 3 Base Emitter Collector Fi g.1 simplified outline (TO-3) and symbo l DESCRIPTION Absolute maximum ratings (Ta= ) SYMBOL PARAMETER 2N6229 VCBO Col lector-base voltage 2N6230 2N6231 2N622 9 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storag e temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -10 0 -120 -140 -100 -120 -140 -7 -10 150 1 50 -65~200 V A W V V UNIT THERMAL CHAR ACTERISTICS SYMBOL Rth j-c PARAMETER Th ermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Trans.
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