2N6249 Transistor Datasheet

2N6249 Datasheet, PDF, Equivalent


Part Number

2N6249

Description

(2N6249 - 2N6251) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6249 Datasheet


2N6249
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6249 2N6250 2N6251
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·High voltage inverters
·Switching regulators
·Line operated amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6249
VCBO
Collector-base voltage
2N6250
2N6251
2N6249
VCEO
Collector-emitter voltage 2N6250
2N6251
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
300
375
450
200
275
350
6
10
30
10
175
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.0
UNIT
/W

2N6249
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6249
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6250 IC=200mA ; IB=0
2N6251
MIN TYP. MAX UNIT
200
275 V
350
VCE(sat)
Collector-emitter
saturation voltage
VBE(sat)
Base-emitter
saturation voltage
ICEV
Collector cut-off
current
ICEO
Collector cut-off
current
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251 IC=10A;IB=1.67 A
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251
2N6249
IC=10A;IB=1.67 A
VCE=RatedVCEV;VBE=-1.5V
TC=125
VCE=150V;IB=0
2N6250 VCE=225V;IB=0
2N6251 VCE=300V;IB=0
1.5 V
2.25 V
5.0
10
mA
5.0 mA
IEBO Emitter cut-off current
VEB=6V; IC=0
2N6249
1.0 mA
10 50
hFE DC current gain
2N6250 IC=10A ; VCE=3V
8 50
2N6251
6 50
fT Transition frequency
IC=1A ; VCE=10V f=1MHz
Is/b
Second breakdown collector current VCE=30V,t=1.0s,
With base forward biased
Nonrepetitive
Switching times
tr Rise time
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
ts Storage time
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
tf Fall time
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
2.5
5.8
MHz
A
2.0 µs
3.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION ·With TO-3 package ·Hig h voltage,high speed ·Low collector sa turation voltage APPLICATIONS ·High vo ltage inverters ·Switching regulators ·Line operated amplifier PINNING PIN 1 2 3 Base Collector;connected to mounti ng base Emitter DESCRIPTION Fig.1 simp lified outline (TO-3) and symbol Absol ute maximum ratings(Ta=25 ) SYMBOL PARA METER 2N6249 VCBO Collector-base voltag e 2N6250 2N6251 2N6249 VCEO Collector-e mitter voltage 2N6250 2N6251 VEBO IC IC M IB PT Tj Tstg Emitter-base voltage Co llector current Collector current-peak Base current Total power dissipation Ju nction temperature Storage temperature TC=25 Open collector Open base Open emi tter CONDITIONS VALUE 300 375 450 200 2 75 350 6 10 30 10 175 200 -65~200 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resist ance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor ww.
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