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BTB41

Sirectifier Semiconductors

Discrete Triacs

BTB/BTA41 www.DataSheet4U.com Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-247AD Dim. A B Millimeter Min. Max. ...


Sirectifier Semiconductors

BTB41

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BTB/BTA41 www.DataSheet4U.com Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 G T2 T1 T2 C D E F G H G T1 J K L M N ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < TO-247AD F = 60 Hz F = 50 Hz Tc = 80 °C t = 16.7 ms t = 20 ms Value 41 420 400 880 Tj = 125° C 50 Unit A A A²s A/µs tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 8 1 - 40 to + 150 - 40 to + 125 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I- III-IV II MIN. MIN. (dI/dt)c (2) Without snubber RL = 33 Ω RL = 3.3 kΩ Tj = 125°C Test Conditions Quadrant I - II -...




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