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Power Transistors. 2N6260 Datasheet

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Power Transistors. 2N6260 Datasheet






2N6260 Transistors. Datasheet pdf. Equivalent




2N6260 Transistors. Datasheet pdf. Equivalent





Part

2N6260

Description

Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·Low saturation voltage · Wide safe operating area APPLICATIONS Power switching circuits ·High-fideli ty amplifers ·Solenoid drivers ·Serie s and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 B ase Emitter Collector DES.
Manufacture

SavantIC

Datasheet
Download 2N6260 Datasheet


SavantIC 2N6260

2N6260; CRIPTION 2N6260 Fig.1 simplified outli ne (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Ba se current Total power dissipation Junc tion temperature Storage temperature TC =25 CONDITIONS Open emitter Open base O pen collector VALU.


SavantIC 2N6260

E 50 40 7 4 2 29 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R th j-C PARAMETER Thermal resistance jun ction to case MAX 3.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Pro duct Specification Silicon NPN Power T ransistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collecto r-emitter sustaining voltage Collector- emitter saturation.


SavantIC 2N6260

voltage Base -emitter on voltage Collec tor cut-off current Collector cut-off c urrent Emitter cut-off current DC curre nt gain DC current gain CONDITIONS IC=0 .1 A ; IB=0 IC=1.5A; IB=0.15A IC=1.5A ; VCE=2V VCE=40V;VBE(off)=-1.5V TC=150 V CE=30V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=2 V IC=1.5A ; VCE=2V 5 20 MIN 80 2N6260 SYMBOL VCEO(SUS) VCEsat VBE ICEV ICEO IEBO hFE-1 hFE-2 .

Part

2N6260

Description

Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·Low saturation voltage · Wide safe operating area APPLICATIONS Power switching circuits ·High-fideli ty amplifers ·Solenoid drivers ·Serie s and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 B ase Emitter Collector DES.
Manufacture

SavantIC

Datasheet
Download 2N6260 Datasheet




 2N6260
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Low saturation voltage
·Wide safe operating area
APPLICATIONS
·Power switching circuits
·High-fidelity amplifers
·Solenoid drivers
·Series and shunt-regulator driver
and output stages
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6260
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PT
Emitter-base voltage
Collector current
Base current
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
50
40
7
4
2
29
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
3.5
UNIT
/W




 2N6260
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
VBE Base -emitter on voltage
ICEV Collector cut-off current
ICEO Collector cut-off current
IC=1.5A ; VCE=2V
VCE=40V;VBE(off)=-1.5V
TC=150
VCE=30V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
DC current gain
IC=1.5A ; VCE=2V
Product Specification
2N6260
MIN TYP. MAX UNIT
80 V
1.5 V
1.5 V
0.5
1.0
mA
0.5 mA
0.2 mA
5
20 100
2




 2N6260
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6260
Fig.2 Outline dimensions
3






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