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Power Transistors. 2N6261 Datasheet

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Power Transistors. 2N6261 Datasheet






2N6261 Transistors. Datasheet pdf. Equivalent




2N6261 Transistors. Datasheet pdf. Equivalent





Part

2N6261

Description

Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·Low collector saturation voltage ·Wide safe operating area APPL ICATIONS ·Power switching circuits ·S eries and shunt-regulator driver and ou tput stages ·High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) P IN 1 2 3 Base Emitter Col.
Manufacture

SavantIC

Datasheet
Download 2N6261 Datasheet


SavantIC 2N6261

2N6261; lector DESCRIPTION 2N6261 Fig.1 simpli fied outline (TO-66) and symbol Absolu te maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Co llector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissip ation Junction temperature Storage temp erature TC=25 CONDITIONS Open emitter O pen base Open coll.


SavantIC 2N6261

ector VALUE 90 80 7 4 2 50 150 -65~200 U NIT V V V A A W THERMAL CHARACTERISTIC S SYMBOL Rth j-C PARAMETER Thermal resi stance junction to case MAX 3.5 UNIT /W SavantIC Semiconductor www.DataSheet4 U.com Product Specification Silicon N PN Power Transistors CHARACTERISTICS Tj =25 unless otherwise specified PARAMETE R Collector-emitter sustaining voltage Collector-emitter .


SavantIC 2N6261

saturation voltage Base -emitter on volt age Collector cut-off current Collector cut-off current Emitter cut-off curren t DC current gain DC current gain CONDI TIONS IC=0.1 A ; IB=0 IC=1.5A; IB=0.15A IC=1.5A ; VCE=2V VCE=80V;VBE(off)=-1.5 V TC=150 VCE=60V; IB=0 VEB=7V; IC=0 IC= 4A ; VCE=2V IC=1.5A ; VCE=2V 5 25 MIN 8 0 2N6261 SYMBOL VCEO(SUS) VCEsat VBE ICEV ICEO IEBO hFE.

Part

2N6261

Description

Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·Low collector saturation voltage ·Wide safe operating area APPL ICATIONS ·Power switching circuits ·S eries and shunt-regulator driver and ou tput stages ·High-fidelity amplifers Solenoid drivers PINNING (See Fig.2) P IN 1 2 3 Base Emitter Col.
Manufacture

SavantIC

Datasheet
Download 2N6261 Datasheet




 2N6261
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·Power switching circuits
·Series and shunt-regulator driver
and output stages
·High-fidelity amplifers
·Solenoid drivers
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6261
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
90
80
7
4
2
50
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
3.5
UNIT
/W




 2N6261
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
VBE Base -emitter on voltage
ICEV Collector cut-off current
ICEO Collector cut-off current
IC=1.5A ; VCE=2V
VCE=80V;VBE(off)=-1.5V
TC=150
VCE=60V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
DC current gain
IC=1.5A ; VCE=2V
Product Specification
2N6261
MIN TYP. MAX UNIT
80 V
0.5 V
1.5 V
0.5
1.0
mA
0.5 mA
0.2 mA
5
25 100
2




 2N6261
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6261
Fig.2 Outline dimensions
3






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