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Power Transistors. 2N6264 Datasheet

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Power Transistors. 2N6264 Datasheet






2N6264 Transistors. Datasheet pdf. Equivalent




2N6264 Transistors. Datasheet pdf. Equivalent





Part

2N6264

Description

(2N6263 / 2N6264) Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·High breakdown voltage · Low collector saturation voltage APPLIC ATIONS ·A wide variety of medium-to-hi gh power, high-voltage applications ·S eries and shunt regulators ·High-fidel ity amplifiers ·Power switching circui ts ·Solenoid drivers PINN.
Manufacture

SavantIC

Datasheet
Download 2N6264 Datasheet


SavantIC 2N6264

2N6264; ING (See Fig.2) PIN 1 2 3 Base Emitter C ollector DESCRIPTION 2N6263 2N6264 Fi g.1 simplified outline (TO-66) and symb ol Absolute maximum ratings(Ta=25 ) SY MBOL VCBO PARAMETER Collector-base volt age 2N6263 2N6264 2N6263 2N6264 CONDITI ONS Open emitter VALUE 140 170 120 150 7 3 4 2 2N6263 2N6264 TC=25 20 50 150 - 65~200 UNIT V VCEO VEBO IC ICM IB PT T j Tstg Collector-.


SavantIC 2N6264

emitter voltage Emitter-base voltage Col lector current Collector current-peak B ase current Total power dissipation Jun ction temperature Storage temperature Open base Open collector V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction t o case 2N6263 2N6264 MAX 8.75 3.5 UNIT /W SavantIC Semiconductor www.DataShee t4U.com Product S.


SavantIC 2N6264

pecification Silicon NPN Power Transist ors CHARACTERISTICS Tj=25 unless otherw ise specified PARAMETER 2N6263 IC=0.1 A ; IB=0 2N6264 2N6263 2N6264 2N6263 VBE Base -emitter on voltage 2N6264 2N6263 ICEX Collector cut-off current 2N6264 2N6263 ICEO Collector cut-off current 2 N6264 2N6263 IEBO Emitter cut-off curre nt 2N6264 2N6263 hFE-1 DC current gain 2N6264 2N6263 hFE-.

Part

2N6264

Description

(2N6263 / 2N6264) Silicon Power Transistors



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·High breakdown voltage · Low collector saturation voltage APPLIC ATIONS ·A wide variety of medium-to-hi gh power, high-voltage applications ·S eries and shunt regulators ·High-fidel ity amplifiers ·Power switching circui ts ·Solenoid drivers PINN.
Manufacture

SavantIC

Datasheet
Download 2N6264 Datasheet




 2N6264
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6263 2N6264
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·A wide variety of medium-to-high power,
high-voltage applications
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6263
2N6264
VCEO
Collector-emitter voltage
2N6263
2N6264
VEBO
IC
ICM
IB
PT
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
2N6263
2N6264
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
170
120
150
7
3
4
2
20
50
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
2N6263
2N6264
MAX
8.75
3.5
UNIT
/W




 2N6264
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6263 2N6264
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6263
2N6264
IC=0.1 A ; IB=0
VCEsat
Collector-emitter
saturation voltage
2N6263 IC=0.5A; IB=0.05A
2N6264 IC=1.0A; IB=0.1A
2N6263 IC=0.5A ; VCE=4V
VBE Base -emitter on voltage
2N6264 IC=1.0A ; VCE=2V
ICEX
Collector cut-off current
2N6263
2N6264
VCE=120V; VBE(off)=-1.5V
TC=150
VCE=150V; VBE(off)=-1.5V
TC=150
2N6263 VCE=100V;IB=0
ICEO Collector cut-off current
2N6264 VCE=130V;IB=0
IEBO Emitter cut-off current
2N6263 VEB=5V; IC=0
2N6264 VEB=7V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
2N6263 IC=0.5 A ; VCE=4V
2N6264 IC=1A ; VCE=2V
2N6263
2N6264
IC=3A ; VCE=2V
fT Transition frequency
IC=0.2A ; VCE=4V
Is/b
Second
breakdown
collector current with
base forward biased
2N6263
2N6264
VCE=120Vdc,t=1.0s,
Nonrepetitive
MIN
120
150
20
20
3
5
200
0.167
0.417
TYP.
MAX
1.2
0.5
2.0
1.5
2
10
0.05
1.0
5
1
2
0.2
100
60
UNIT
V
V
V
mA
mA
mA
KHz
A
2




 2N6264
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6263 2N6264
Fig.2 Outline dimensions
3






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