2N6359

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain ·Excellent safe operating area APPLICATIONS ·Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6359 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 16 30 4 150 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition freuqency CONDITIONS IC=0.2A ;IB=0 IC=8A ;IB=0.8A IC=16A; IB=3.2A IC=8A ; VCE=4V VCE=80V; IB=0 VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; I...