2N6360 Transistor Datasheet

2N6360 Datasheet, PDF, Equivalent


Part Number

2N6360

Description

Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6360 Datasheet


2N6360
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6360
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·Excellent safe operating area
APPLICATIONS
·Designed for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
7
12
24
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W

2N6360
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=2.4A
VBE Base-emitter on voltage
IC=6A ; VCE=4V
ICEO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCE=100V; IB=0
VCE=120V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=4V
hFE-2
DC current gain
IC=12A ; VCE=4V
fT Transition freuqency
IC=1A ; VCE=4V
Product Specification
2N6360
MIN TYP. MAX UNIT
100 V
1.4 V
4.0 V
2.2 V
2.0 mA
2.0
10.0
mA
5.0 mA
15
5
0.2 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·Low collector saturation v oltage ·High DC current gain ·Excelle nt safe operating area APPLICATIONS ·D esigned for high power applications and switching circuits such as relay or so lenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitt er Collector DESCRIPTION 2N6360 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL V CBO VCEO VEBO IC ICM IB PD Tj Tstg PARA METER Collector-base voltage Collector- emitter voltage Emitter-base voltage Co llector current Collector current-peak Base current Total Power Dissipation Ju nction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 7 12 24 4 150 150 -65~200 UNIT V V V A A A W TH ERMAL CHARACTERISTICS SYMBOL Rth j-c PA RAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataSheet4U.com .
Keywords 2N6360, datasheet, pdf, SavantIC, Silicon, Power, Transistor, N6360, 6360, 360, 2N636, 2N63, 2N6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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