2N6372 Transistor Datasheet

2N6372 Datasheet, PDF, Equivalent


Part Number

2N6372

Description

(2N6372 - 2N6374) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6372 Datasheet


2N6372
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Designed for switching and wide-band
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6372
VCBO
Collector-base voltage
2N6373
2N6374
2N6372
VCEO
Collector-emitter voltage 2N6373
2N6374
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
90
70
50
80
60
40
6
6
40
150
-65~200
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W

2N6372
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6372 2N6373 2N6374
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N6372
80
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6373 IC=0.1A ;IB=0
60
V
2N6374
40
VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A
0.7 V
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A
1.2 V
VBEsat-1 Base-emitter saturation voltage
IC=2A; IB=0.2A
1.2 V
VBEsat-2 Base-emitter saturation voltage
IC=6A; IB=0.6A
2.0 V
2N6372 VCE=80V; IB=0
ICEO Collector cut-off current 2N6373 VCE=60V; IB=0
0.1 mA
2N6374 VCE=40V; IB=0
ICBO Collector cut-off current
VCB=Rated VCB; IE=0
10 µA
IEBO Emitter cut-off current
VEB=6V; IC=0
0.1 mA
2N6372 IC=2A ; VCE=2V
hFE DC current gain
2N6373 IC=2.5A ; VCE=2V
20 100
2N6374 IC=3A ; VCE=2V
fT Transition frequency
IC=0.5A;VCE=10V;f=1MHz
4 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications PI NNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig. 1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6372 VCBO Collector-base v oltage 2N6373 2N6374 2N6372 VCEO Collec tor-emitter voltage 2N6373 2N6374 VEBO IC PD Tj Tstg Emitter-base voltage Coll ector current Total Power Dissipation J unction temperature Storage temperature TC=25 Open collector Open base Open em itter CONDITIONS VALUE 90 70 50 80 60 4 0 6 6 40 150 -65~200 V A W V V UNIT TH ERMAL CHARACTERISTICS SYMBOL Rth j-c PA RAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semic onductor www.DataSheet4U.com Product S pecification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u.
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