2N6474

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6473 VCBO Collector-base voltage 2N6474 2N6473 VCEO Collector-emitter voltage 2N6474 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 5 4 2 40 150 -65~150 V A A W Open emitter 130 100 V CONDITIONS VALUE 110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6473 VCEO(SUS) Collector-emitter sustaining voltage 2N6474 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6473 ICEX Collector cut-off current 2N6474 2N6473 ICEO Collector cut-off current 2N6474 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=60V;IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V I...