2N6371 Transistor Datasheet

2N6371 Datasheet, PDF, Equivalent


Part Number

2N6371

Description

Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6371 Datasheet


2N6371
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High dissipation capability
·Excellent safe operating area
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power-switching circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6371
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
40
5
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W

2N6371
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6371
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A
VBE Base-emitter on voltage
IC=16A ; VCE=4V
ICEO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCE=25V; IB=0
VCE=45V;VBE(off)=1.5V
VCE=40V;VBE(off)=1.5V;TC=150
VEB=5V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
DC current gain
IC=16A ; VCE=4V
fT Transition freuqency
IC=1A ; VCE=4V
40 V
1.5 V
4.0 V
4.0 V
1.5 mA
2.0
10.0
mA
10 mA
15 60
4
0.8 MHz
2


Features SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-3 p ackage ·Low collector saturation volta ge ·High dissipation capability ·Exce llent safe operating area APPLICATIONS ·Series and shunt regulators ·High-f idelity amplifiers ·Power-switching ci rcuits PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specifi cation 2N6371 Fig.1 simplified outline (TO-3) and symbol Absolute maximum rat ings(Ta= ) SYMBOL PARAMETER VCBO Co llector-base voltage VCEO Collector-e mitter voltage VEBO Emitter-base volt age IC Collector current IB Base curr ent PD Total Power Dissipation Tj Jun ction temperature Tstg Storage tempera ture CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTE RISTICS SYMBOL PARAMETER Rth j-c The rmal resistance junction to case VALUE 50 40 5 15 7 117 200 -65~200 UNIT V V V A A W VALUE 1.5 UNIT /W SavantIC Semiconductor Silicon NPN Power Transis tors Product Specification 2N6371 CHARACTERISTICS Tj=25 unles.
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