CSA1362

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transistor Marking CSA1362GR = 62 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 100 mA; –VCE = 1 V –V CBO –V CEO –V EBO –IC Ptot Tj hFE max. max. max. max. max max. min. max. 15 15 5 800 200 150 120 400 V V V mA mW °C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Ptot Total power dissipation at Tamb = 25°C max. max. max. max. max 15 15 5 800 200 V V V mA mW Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CSA1362 Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Tstg Tj –55 to +150 max. 150 °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –IC = 10 mA –V(BR)CEO min. Collector cut–off current ...