29LV010 EN29LV010 Datasheet

29LV010 Datasheet, PDF, Equivalent


Part Number

29LV010

Description

EN29LV010

Manufacture

Eon Silicon Solution

Total Page 30 Pages
Datasheet
Download 29LV010 Datasheet


29LV010
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E1dNMa20e9g.LaVbi0t1(0128K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
EN29LV010
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
High performance
- Full voltage range: access times as fast as 55
ns
- Regulated voltage range: access times as fast
as 45ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- Eight 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle bits
feature
Single Sector and Chip Erase
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS Flash
Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
Package options
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
-
Commercial and industrial Temperature Range
GENERAL DESCRIPTION
The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05

29LV010
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CONNECTION DIAGRAMS
EN29LV010
TABLE 1. PIN DESCRIPTION
Pin Name
A0-A16
DQ0-DQ7
WE#
CE#
OE#
Vcc
Vss
Function
Addresses
8 Data Inputs/Outputs
Write Enable
Chip Enable
Output Enable
Supply Voltage
Ground
FIGURE 1. LOGIC DIAGRAM
A0 - A16
EN29LV010
CE#
OE#
WE#
DQ0 – DQ7
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05


Features www.DataSheet4U.com EN29LV010 EN29LV01 0 1 Megabit (128K x 8-bit ) Uniform Sec tor, CMOS 3.0 Volt-only Flash Memory FE ATURES • Single power supply operatio n - Full voltage range: 2.7-3.6 volt re ad and write operations for battery-pow ered applications. - Regulated voltage range: 3.0-3.6 volt read and write oper ations for high performance 3.3 volt mi croprocessors. • High performance - F ull voltage range: access times as fast as 55 ns - Regulated voltage range: ac cess times as fast as 45ns • Low powe r consumption (typical values at 5 MHz) - 7 mA typical active read current - 1 5 mA typical program/erase current - 1 µA typical standby current (standard a ccess time to active mode) • Flexible Sector Architecture: Eight 16 Kbyte se ctors Supports full chip erase Individu al sector erase supported Sector protec tion and unprotection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed - Byte program time: 8µs typical -.
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