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EN29LV160A

Eon Silicon Solution

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory

EN29LV160A EN29LV160A www.DataSheet4U.com 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash M...


Eon Silicon Solution

EN29LV160A

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Description
EN29LV160A EN29LV160A www.DataSheet4U.com 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES 3.0V, single power supply operation - Minimizes system level power requirements High performance - Access times as fast as 70 ns Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 µA standby current - Sector erase time: 500ms typical - Chip erase time: 17.5s typical JEDEC Standard program and erase commands JEDEC standard DATA# polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode Triple-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 2.5V minimum 1,000K program/erase endurance Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword sectors (word mode) Sector protection : - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. High performance program/erase speed - Byte/Word program time: 8µs typical cycle Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm FBG...




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