EN29LV512

www.DataSheet4U.com EN29LV512 EN29LV512 512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors. High performance - Full voltage range: access times as fast as 55 ns - Regulated voltage range: access times as fast as 45ns Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: Four 16 Kbyte sectors Supports full chip erase Individual sector erase supported Sector protection and unprotection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed - Byte program time: 8µs typical - Sector erase time: 500ms typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode triple-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 2.5V >100K program/erase endurance cycle da0. Package options - 8mm x 20mm 32-pin TSOP (Type 1) - 8mm x 14mm 32-pin TS...