HY531000A

HY531000A 1Mx1, Fast Page mode www.DataSheet4U.com DESCRIPTION This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max. Active power dissipation Speed 60 70 80 Ÿ Refresh cycle Part number HY531000A Refresh 512 Normal 8ms L-part 64ms Power 467mW 412mW 357mW Ÿ JEDEC standard pinout Ÿ 20/26-pin SOJ (300mil) Ÿ Single power supply of 5V ± 10% Ÿ Early Write or output enable controlled write Ÿ Fast access time and cycle time Speed 60 70 80 tRAC 60ns 70ns 80ns tCAC 15ns 20ns 20ns tPC 40ns 40ns 45ns ORDERING INFORMATION Part Name HY531000AJ HY531000ALJ *L : Low power Refresh 512 512 Power Package 20/26Pin SOJ L-part 20/26Pin SOJ This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of circuits described. No patent licences are implied Hyunda...